• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The liquid crystal display device and a method of manufacturing the same by using a double layer of a semiconductor layer and a transparent conductive film in the portion where the pixel electrode contact hole is formed to facilitate contact hole formation and greatly improve the contact resistance to improve the image quality of the liquid crystal display device. A liquid crystal display device having a plurality of gate lines and data lines formed in a direction perpendicular to each other between a pixel region having a matrix form and a pixel region, wherein the liquid crystal display is formed in a storage capacitor region on a substrate. A conductive layer formed of a transparent conductive material, a semiconductor layer overlapping a portion of the conductive layer and formed under the data line and electrically contacting the data line, and formed over the pixel region in the same direction as the gate line; A common electrode line and an upper portion of the gate line and the data line And a pixel electrode formed in each pixel region by being electrically contacted with the semiconductor layer region overlapping the conductive layer and blocking the light, and providing a corresponding method of manufacturing a liquid crystal display device. There is a gist.
    公开号:KR19990081655A
    申请号:KR1019980015688
    申请日:1998-04-30
    公开日:1999-11-15
    发明作者:김홍규
    申请人:구자홍；엘지전자 주식회사；
    IPC主号:
    专利说明:

    LCD and its manufacturing method
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device for improving aperture ratio by increasing light transmittance and a method of manufacturing the same.
    In order to increase the luminance of the liquid crystal display, the aperture ratio must be increased, and methods of increasing the aperture ratio include a method of reducing the area occupied by the storage capacitor or the area occupied by the thin film transistor while having the same storage capacity value.
    Hereinafter, a method of manufacturing a liquid crystal display according to the related art will be described with reference to the accompanying drawings.
    FIG. 1A is a plan view illustrating a liquid crystal display according to the related art, and FIG. 1B is an equivalent circuit diagram of FIG. 1A. As shown in FIGS. 1A and 1B, the liquid crystal display is a matrix electrode 10 having a matrix form. The gate electrode 5 line formed in one direction with the gap between and the data electrode 8 formed in a direction perpendicular to the gate electrode 5 line and contacting the semiconductor layer 2 to be used as a source electrode of the thin film transistor 8. ) And a common electrode (6) line formed in the same direction as the gate electrode (5) line and formed over the pixel region.
    Referring to the accompanying drawings, a method for manufacturing a liquid crystal display device according to the related art configured as described above is as follows.
    First, as shown in FIG. 2A, a semiconductor layer 2, which is a polycrystalline silicon layer, is formed on a transparent insulating substrate 1 such as glass or quartz, and then patterned into islands.
    Subsequently, as shown in FIG. 2B, a photoresistor is formed to form a lower electrode of a storage capacitor on the entire surface of the transparent insulating substrate 1 including the semiconductor layer 2, which is the island-like polycrystalline silicon layer. (3) is applied and then patterned, and ion-implanted into the semiconductor layer 2, which is a polycrystalline silicon layer, with impurities such as boron or phosphorus using the patterned photosensitive film 3 as a mask. Define the lower electrode area of the storage capacitor.
    Next, as shown in FIG. 2C, after the photosensitive film 3 is removed, the gate insulating film 4 is deposited on the entire surface of the semiconductor layer 2, which is the polycrystalline silicon layer, by a thermal oxidation process, and then the polycrystalline silicon and silicide materials are insulated from each other. Deposition and patterning are sequentially performed on the entire surface of the substrate 1 to form the common electrode 6 used as the gate electrode 5 and the upper electrode of the storage capacitor.
    Subsequently, ions such as boron or phosphorous are implanted into the gate insulating film 4 to form a source / drain electrode using the gate electrode 5 and the common electrode 6 as masks.
    Then, as shown in FIG. 2D, a first interlayer insulating film 7 is deposited on the entire surface of the insulating substrate 1 including the gate electrode 5 and the common electrode 6, and then the first upper portion of the source region of the device is deposited. A portion of the first interlayer insulating film 7 and the gate insulating film 4 are removed to form a metal contact hole 8.
    Thereafter, as shown in FIG. 2E, a metal 9 to be used as a data line is deposited on the front surface of the gate electrode 5 and the metal contact hole 8, and then patterned.
    Subsequently, as illustrated in FIG. 2F, a second interlayer insulating film 10 is deposited on the entire surface of the data line 8 and the first interlayer insulating film 7 to insulate the data line 8. An opaque film, ie, a black matrix layer 11, is formed to block light in between, and then patterned.
    After that, as shown in FIG. 2G, the planarization film 12 is formed using a material such as BPSG, BCB, SOG, or the like to planarize the entire surface of the second interlayer insulating film 10 and the black matrix layer 11. Subsequently, a portion of the planarization film 12, the second interlayer insulating film 10, the first interlayer insulating film 7, and the gate insulating film 4 over the drain region of the device is removed to form the pixel electrode contact hole 13.
    Next, as shown in FIG. 2H, indium tin oxide (ITO), which is a transparent electrode material, is deposited on the entire surface of the planarization layer 12 and the semiconductor layer 2, which is a polycrystalline silicon layer, to form the pixel electrode 14. After patterning, although not shown, the PAD OPEN process is performed to complete the bottom plate production.
    However, in the manufacturing method of the liquid crystal display according to the related art, as described above, since the same material as the opaque gate electrode material is used as the common electrode line forming the storage capacitor, the aperture ratio is reduced as much as the internal storage capacitor occupies the pixel. have.
    In addition, in the manufacturing method of the liquid crystal display according to the prior art, it is difficult to form a contact hole when the thickness of the semiconductor layer is thin when forming the pixel electrode contact hole, which causes contact resistance between the pixel electrode material and the semiconductor layer. As a result, it is difficult to manufacture a liquid crystal display device having good image quality.
    Accordingly, the present invention has been made to solve the above problems, by using a double layer of the semiconductor layer and the transparent conductive film in the portion where the pixel electrode contact hole is formed to facilitate the formation of contact holes (contact hole) and also large contact resistance It is an object of the present invention to provide a liquid crystal display device which improves the image quality of the liquid crystal display device greatly and to make the storage capacitor part transparent so as to greatly improve the brightness.
    It is an object of the present invention to provide a method of manufacturing a liquid crystal display device corresponding to the above structure.
    1A and 1B are views showing a plane of a liquid crystal display according to the related art and an equivalent circuit diagram thereof.
    2A to 2H are cross-sectional views of respective manufacturing processes of the liquid crystal display device according to the prior art.
    3A to 3H are cross-sectional views taken along the line A-A 'in each manufacturing process of the liquid crystal display device according to the present invention.
    4 is a cross-sectional view showing another embodiment in each manufacturing process of the liquid crystal display device according to the present invention.
    Explanation of symbols for main parts of the drawings
    111: insulating substrate 112, 112 ': conductive material (ITO)
    113, 113 ': semiconductor layer 114: gate insulating film
    115: gate electrode 116: common electrode
    117: first interlayer insulating film 118: metal contact hole
    119: data line 120: the second interlayer insulating film
    121: black matrix layer 122: planarization film
    123: pixel electrode contact hole 124: pixel electrode ITO
    A feature of the liquid crystal display device according to the present invention for achieving the above object is a liquid crystal display device having a plurality of gate lines and data lines formed in a direction perpendicular to each other between the pixel region of the matrix form and the pixel region. A conductive layer formed in a storage capacitor region on a substrate and formed of a transparent conductive material, a semiconductor layer overlapping a portion of the conductive layer and formed under the data line and in electrical contact with the data line; A common electrode line formed over the pixel region in the same direction as the above, a black matrix layer formed over the gate line and the data line to block light, and a semiconductor layer region overlapping the conductive layer It is composed of a pixel electrode formed in the pixel region.
    Another feature of the liquid crystal display according to the present invention for achieving the above object is that the conductive film, the common electrode line and the pixel electrode is made of indium tin oxide (ITO).
    Another feature of the liquid crystal display according to the present invention for achieving the above object is that the data line is in contact with the source region of the semiconductor layer.
    Another feature of the liquid crystal display according to the present invention for achieving the above object is that the semiconductor layer in the region overlapping with the conductive film is formed on or below the conductive film.
    A method of manufacturing a liquid crystal display device according to an embodiment of the present invention for achieving the above object includes a first step of forming a conductive film used as a lower electrode of a storage capacitor in a storage capacitor region on a substrate, and a predetermined region on the substrate. A second step of forming a semiconductor layer so as to overlap a portion of the conductive film, a third step of forming a gate insulating film on the entire surface including the semiconductor layer, and forming and patterning an electrode material on the gate insulating film to form a pattern on the semiconductor layer A fourth step of forming a gate line, a fifth step of forming an source region and a drain region by implanting impurities into the semiconductor layer using the gate line as a mask, and an upper electrode of the storage capacitor on the gate insulating layer A sixth step of forming a common electrode line to be used as the second electrode; A seventh step of forming and patterning a first interlayer insulating film on one surface of the semiconductor layer to expose the source region of the semiconductor layer; and an eighth step of forming a data line on the first interlayer insulating film to be connected to the exposed source region. And a ninth step of forming a second interlayer insulating film on the entire surface including the data line and forming a black matrix layer on the data line and the gate line, and forming and patterning a planarization film on the entire surface including the black matrix layer. And a tenth step of exposing a drain region of the semiconductor layer overlapping the conductive film, and an eleventh step of forming a pixel electrode in the pixel region on the planarization film so as to be connected to the exposed drain region.
    Another feature of the manufacturing method of the liquid crystal display device according to the present invention for achieving the above object is to proceed to the first step after the second step in the first step and the first step.
    Another feature of the manufacturing method of the liquid crystal display device according to the present invention for achieving the above object is that the conductive film, the common electrode line and the pixel electrode are made of the same material.
    Another feature of the manufacturing method of the liquid crystal display device according to the present invention for achieving the above object is that the same material is made of indium tin oxide (ITO).
    Hereinafter, a preferred embodiment of a liquid crystal display and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.
    3A to 3H are cross-sectional views taken along line AA ′ of the manufacturing process of the LCD according to the present invention. As shown in FIG. 3A, ITO and ITO are formed on the front surface of a transparent insulating substrate 111 such as glass or quartz. After depositing the transparent conductive film 112, which is a transparent conductive material, the pattern is formed in an island shape on the portion where the storage capacitor is to be formed.
    Subsequently, a semiconductor layer 113, which is a polycrystalline silicon layer, which is a semiconductor material to be used as a semiconductor layer, is formed on the entire surface of the insulating substrate 111 including the transparent conductive film 112, and then patterned in an island shape.
    In this case, as shown in FIG. 3A, a portion of the formed transparent conductive layer 112 and a portion of the semiconductor layer 113 made of polycrystalline silicon overlap so as to be connected to each other.
    3B, a low pressure chemical vapor deposition (LPCVD), a plasma enhanced chemical vapor deposition (PECVD), and the like are formed on the entire surface of the formed transparent conductive film 112 and the semiconductor layer 113 of polycrystalline silicon. The equipment is used to deposit the gate insulating film 114.
    Subsequently, as shown in FIG. 3C, a conductive material is deposited on the entire surface of the deposited gate insulating layer 114 using a gate electrode material and then patterned to form a gate electrode 115 line.
    Then, to define the source / drain regions of the device, impurities (B or P) are ion implanted and then heat treated to activate the implanted impurities.
    Next, as shown in FIG. 3D, after the common electrode 116 is deposited with a transparent conductive film such as ITO, which is used as a pixel electrode, on the storage capacitor 114 on the gate insulating layer 114 on which the gate electrode 115 line is formed. Pattern.
    Subsequently, a first interlayer insulating layer 117 is deposited on the entire surface of the gate insulating layer 114 including the gate electrode 115 line and the common electrode 116, and then the first interlayer insulating layer 117 and the gate above the source region of the device. A portion of the insulating layer 114 is removed to form a metal contact hole 118.
    3E, a metal is deposited on the entire surface of the insulating substrate 111 on which the metal contact hole 118 is formed, and then patterned to form a data line 119.
    3F, a second interlayer insulating film 120 is deposited on the entire surface of the first interlayer insulating film 117 including the patterned data line 119, and then light is blocked between the pixels. The black matrix layer 121, which is an opaque film for giving, is deposited and then patterned.
    Subsequently, the planarization layer is formed by planarization using a material such as BPSG, BCB, or SOG to planarize the insulating substrate 111 on the entire surface of the second interlayer insulating layer 120 including the patterned black matrix layer 121. And form 122.
    3G, a portion of the planarization layer 122, the second interlayer insulating layer 120, the first interlayer insulating layer 117, and the transparent conductive layer 112 over the drain region of the device may be removed. The electrode contact hole 123 is formed.
    In this case, the pixel electrode contact hole 123 may be formed where the semiconductor layer 113, which is the polycrystalline silicon, and the transparent conductive layer 112 overlap each other.
    Thereafter, as illustrated in FIG. 3H, ITO, which is a transparent electrode material, is deposited to form a pixel electrode 124 and then patterned, and although not shown, a PAD OPEN process is performed to complete lower plate fabrication.
    In addition, another embodiment of the manufacturing method of the liquid crystal display according to the present invention will be described with reference to the accompanying drawings.
    4 is a cross-sectional view showing another embodiment in each manufacturing process of the liquid crystal display device according to the present invention, in which a polycrystalline silicon layer, which is a semiconductor material to be used as a semiconductor layer, is formed on the entire surface of a transparent insulating substrate 111 such as glass or quartz. It is formed into a layer 113 'and then patterned into islands.
    Subsequently, a transparent conductive film 112 ', which is a transparent conductive material such as ITO, is deposited on the entire surface of the insulating substrate 111 including the transparent conductive film 112', and then patterned in an island shape on a portion where the storage capacitor is to be formed.
    Even if manufactured in this way, the same effect as with the manufacturing method described above with reference to FIGS. 3B to 3H can be obtained.
    Since the following process is the same as described above, it is omitted.
    As described above, in the liquid crystal display device and the manufacturing method thereof according to the present invention, since the storage capacitor is formed of a transparent conductive film / gate insulating film / transparent conductive film, light can also be transmitted to the storage capacitor, thereby improving the aperture ratio. It works.
    In the present invention, since the double layer of the semiconductor layer and the transparent conductive film is formed in the portion where the pixel electrode contact hole is formed, there is also an advantage that it is easy to form a contact hole.
    In addition, in the present invention, since the same conductive material is formed to make contact, the contact resistance can be greatly reduced, so that charge accumulation can be facilitated, thereby producing a panel having good image quality.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] A liquid crystal display device having a plurality of gate lines and data lines formed in a direction perpendicular to each other between a pixel area having a matrix form and the pixel area.
    A conductive film formed in the storage capacitor region on the substrate and made of a transparent conductive material;
    A semiconductor layer overlapping a portion of the conductive layer and formed under the data line and in electrical contact with the data line;
    A common electrode line formed over the pixel area in the same direction as the gate line;
    A black matrix layer formed on the gate line and the data line to block light;
    And a pixel electrode electrically contacting the semiconductor layer region overlapping the conductive film and formed in each pixel region.
    [2" claim-type="Currently amended] The method of claim 1,
    And the conductive layer, the common electrode line, and the pixel electrode are made of indium tin oxide (ITO).
    [3" claim-type="Currently amended] The method of claim 1,
    And the data line is in contact with the source region of the semiconductor layer.
    [4" claim-type="Currently amended] The method of claim 1,
    And a semiconductor layer in a region overlapping with the conductive film is formed on the conductive film or under the conductive film.
    [5" claim-type="Currently amended] A first step of forming a conductive film used as a lower electrode of the storage capacitor in a storage capacitor region on the substrate;
    A second step of forming a semiconductor layer so as to overlap a portion of the conductive film in a predetermined region on the substrate;
    A third step of forming a gate insulating film on the entire surface including the semiconductor layer;
    Forming and patterning an electrode material on the gate insulating film to form a gate line on the semiconductor layer;
    A fifth step of implanting impurities into the semiconductor layer using the gate line as a mask to form a source region and a drain region;
    A sixth step of forming a common electrode line used as an upper electrode of the storage capacitor on the gate insulating film;
    A seventh step of forming and patterning a first interlayer insulating film over the entire surface including the gate electrode to expose a source region of the semiconductor layer;
    An eighth step of forming a data line on said first interlayer insulating film so as to be connected to said exposed source layer;
    A ninth step of forming a second interlayer insulating film on the entire surface including the data line and forming a black matrix layer on the data line and the gate line;
    A tenth step of forming and patterning a planarization film over the entire surface including the black matrix layer to expose a drain region of the semiconductor layer overlapping the conductive film;
    And an eleventh step of forming a pixel electrode in the pixel region on the planarization layer so as to be connected to the exposed drain region.
    [6" claim-type="Currently amended] The method of claim 5,
    And in the first and second steps, proceeding with the first step after advancing the second step.
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    同族专利:
    公开号 | 公开日
    KR100272588B1|2000-11-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-04-30|Application filed by 구자홍, 엘지전자 주식회사
    1998-04-30|Priority to KR1019980015688A
    1999-11-15|Publication of KR19990081655A
    2000-11-15|Application granted
    2000-11-15|Publication of KR100272588B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980015688A|KR100272588B1|1998-04-30|1998-04-30|Liquid crystal display device and fabricating method of it|
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